PDF Free Download | Chemical Mechanical Planarization of Microelectronic Materials by Joseph M. Steigerwald, Shyam P. Murarka, and Ronald J. Gutmann
Contents of Chemical Mechanical Planarization of Microelectronic Materials
- Chemical Mechanical Planarbation-An Introduction
- Introduction
- Applications
- The CMP Process
- CMPTools
- Process Integration
- Conclusion and Book Outline
- References
- Historical Motivations for CMP
- Advanced Metallization Schemes
- Interconnect Delay Impact on Performance
- Methods of Reducing Interconnect Delay
- Planarity Requirements for Multilevel
- Metallization
- Planarization Schemes
- Smoothing and Local Planarization
- Global Planarization
- CMP Planarization
- Advantages of CMP
- Disadvantages of CMP
- The Challenge of CMP
- References
- CMP Variables and Manipulations
- Output Variables
- Input Variables
- References
- Mechanical and Electrochemical Concepts for CMP
- Preston Equation
- Fluid Layer Interactions
- Boundary Layer Interactions
- Fluid Boundary Layer
- Double Layer
- Metal Surface Films
- Mechanical Abrasion
- Polishing vs Grinding
- Hertzian Indentation vs Fluid-Based Wear
- Abrasion Modes
- The Polishing Pad
- Pad Materials and Properties
- Pad Conditioning
- Reduction-Oxidation Reactions
- Pourbaix Diagrams
- Mixed Potential Theory
- Example: Copper CMP in NH -Based Slurries
- Example: Copper-Titanium Interaction
- Role of Chemistry in CMP
- Electrochemical Phenomena
- Abrasives
- References
- Oxide CMP Processes-Mechanisms and Models
- The Role of Chemistry in Oxide Polishing
- Glass Polishing Mechanisms
- The Role of Water in Oxide Polishing
- Chemical Interactions Between Abrasive and
- Oxide Surface
- Oxide CMP in Practice
- Polish Rate Results
- Planarkation Results
- CMP in Manufacturing
- Yield Issues
- summary
- References
- Tungsten and CMP Processes
- Inlaid Metal Patterning
- I RIE Etch Back
- Metal CMP
- Tungsten CMP Processes
- Summary
- References
- Tungsten CMP
- Surface Passivation Model for Tungsten CMP
- CopperCMP
- Proposed Model for Copper CMP
- Surface Layer Formation-Planarkation
- Formation of Native Surface Films
- Formation of Nonnative Cu-BTA Surface Film
- Material Dissolution
- Removal of Abraded Material
- Increasing Solubility with Complexing Agent
- Increasing Dissolution Rate with Oxidizing
- Agents
- Chemical Aspect of the Copper CMP Model
- Preston Coefficient
- Polish Rates
- Comparison of Kp Values
- Preston Equation
- Polish-Induced Stress
- Pattern Geometry Effects
- Dishing and Erosion in CdSiO, System
- Optimization of Process to Minimize Dishing
- and Erosion
- Summary
- References
- CMP of Other Materials and New CMP Applications
- The Front-End Applications in Silicon IC Fabrication
- Shallow Trench Isolation
- CMP of Polysilicon Films
- CMP of Photoresists
- Planarizing A and A Alloys
- Planarization of Diffusion BarrierslAdhesion
- Promoters
- CMP of Advanced Interlevel Dielectric Materials:
- Polymers
- Polymer CMP
- Inlaid Metal CMP with Polymer ILDs
